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SI6973DQ Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI6973DQ Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si6973DQ Vishay Siliconix New Product Document Number: 71190 S-01058—Rev. A, 22-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 5 10 15 20 25 0 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) Crss VDS = 10 V ID = 4.8 A ID – Drain Current (A) VGS = 4.5 V ID = 4.8 A Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.02 0.04 0.06 0.08 02468 10 TJ = 25_C ID = 4.8 A 30 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 150_C VGS = 2.5 V VGS = 1.8 V 0 500 1000 1500 2000 2500 3000 3500 4000 0 4 8 12 16 20 Coss Ciss |
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