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SI7948DP Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7948DP Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package D Dual MOSFET for Space Savings APPLICATIONS D Automotive - ABS - Coil Driver - Load Switch Si7948DP Vishay Siliconix New Product Document Number: 72403 S-31867—Rev. A, 15-Sep-03 www.vishay.com 1 Dual N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 60 0.075 @ VGS = 10 V 4.6 60 0.100 @ VGS = 4.5 V 4.0 N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAKr SO-8 Ordering Information: Si7948DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 4.6 3.0 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 3.6 2.4 Pulsed Drain Current IDM 15 A Continuous Source Current (Diode Conduction)a IS 2.7 1.2 Single Avalanche Current L = 0.1 mH IAS 15 Single Avalanche Energy EAS 11 mJ Maximum Power Dissipationa TA = 25_C PD 3.3 1.4 W Maximum Power Dissipationa TA = 70_C PD 2.1 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 29 38 Maximum Junction-to-Ambienta Steady State RthJA 60 85 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.0 5.2 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
Número de pieza similar - SI7948DP |
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