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TC58FVT160AFT-10 Datasheet(PDF) 8 Page - Toshiba Semiconductor

No. de pieza TC58FVT160AFT-10
Descripción Electrónicos  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
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TC58FVT160AFT-10 Datasheet(HTML) 8 Page - Toshiba Semiconductor

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TC58FVT160/B160AFT/AXB-70,-10
2002-08-06
8/41
Auto-Program Mode
The TC58FVT160/B160A can be programmed in either byte or word units. Auto-Program Mode is set using the
Program command. The program address is latched on the falling edge of the WE signal and data is latched on
the rising edge of the fourth Bus Write cycle (with WE control). Auto programming starts on the rising edge of
the WE signal in the fourth Bus Write cycle. The Program and Program Verify commands are automatically
executed by the chip. The device status during programming is indicated by the Hardware Sequence flag. To read
the Hardware Sequence flag, specify the address to which the Write is being performed
.
During Auto-Program execution, a command sequence cannot be accepted. To terminate execution, use a
hardware reset. Note that if the Auto-Program operation is terminated in this manner, the data written so far is
invalid.
Any attempt to program a protected block is ignored. In this case the device enters Read Mode 3 µs after the
rising edge of the WE signal in the fourth Bus Write cycle.
If an Auto-Program operation fails, the device remains in the programming state and does not automatically
return to Read Mode. The device status is indicated by the Hardware Sequence flag. Either a Reset command or
a hardware reset is required to return the device to Read Mode after a failure. If a programming operation fails,
the block which contains the address to which data could not be programmed should not be used.
The device allows 0s to be programmed into memory cells which contain a 1. 1s cannot be programmed into
cells which contain 0s. If this is attempted, execution of Auto Program will fail. This is a user error, not a device
error. A cell containing 0 must be erased in order to set it to 1.
Fast Program Mode
Fast Program is a function which enables execution of the command sequence for the Auto Program to be
completed in two cycles. In this mode the first two cycles of the command sequence, which normally requires four
cycles, are omitted. Writing is performed in the remaining two cycles. To execute Fast Program, input the Fast
Program command. Write in this mode uses the Fast Program command but operation is the same at that for
ordinary Auto-Program. The status of the device is indicated by the Hardware Sequence flag and read operations
can be performed as usual. To exit this mode, the Fast Program Reset command must be input. When the
command is input, the device will return to Read Mode.
Program Suspend/Resume Mode
Program Suspend is used to enable Data Read by suspending the Write operation. The device accepts a
Program Suspend command in Write Mode (including Write operations performed during Erase Suspend) but
ignores the command in other modes. After input of the command, the device will enter Program Suspend Read
Mode after tSUSP.
During Program Suspend, Cell Data Read, ID Read and CFI Data Read can be performed. When Data Write is
suspended, the address to which Write was being performed becomes undefined. ID Read and CFI Data Read are
the same as usual.
After completion of Program Suspend input a Program Resume command to return to Write Mode. On
receiving the Resume command, the device returns to Write Mode and resumes outputting the Hardware
Sequence flag for the bank to which data is being written.
Program Suspend can be run in Fast Program Mode.


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