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74AHC2G08DP Datasheet(PDF) 9 Page - NXP Semiconductors |
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74AHC2G08DP Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 17 page 9397 750 13735 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 18 October 2004 9 of 17 Philips Semiconductors 74AHC2G08; 74AHCT2G08 Dual 2-input AND gate 12. Dynamic characteristics [1] Typical values are measured at VCC = 3.3 V. [2] Typical values are measured at VCC = 5.0 V. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. [4] The condition is VI = GND to VCC. Table 10: Dynamic characteristics type 74AHC2G08 At recommended operating conditions; voltages are referenced to GND (ground = 0 V); tr =tf ≤ 3.0 ns; see Figure 7. Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 °C tPHL, tPLH propagation delay nA and nB to nY see Figure 6 VCC = 3.0 V to 3.6 V; CL = 15 pF [1] - 4.6 8.8 ns VCC = 4.5 V to 5.5 V; CL = 15 pF [2] - 3.2 5.9 ns VCC = 3.0 V to 3.6 V; CL = 50 pF [1] - 6.5 12.3 ns VCC = 4.5 V to 5.5 V; CL = 50 pF [2] - 4.6 7.9 ns CPD power dissipation capacitance CL = 50 pF; fi = 1 MHz [3] [4] -17 - pF Tamb = −40 °C to +85 °C tPHL, tPLH propagation delay nA and nB to nY see Figure 6 VCC = 3.0 V to 3.6 V; CL = 15 pF 1.0 - 10.5 ns VCC = 4.5 V to 5.5 V; CL = 15 pF 1.0 - 7.0 ns VCC = 3.0 V to 3.6 V; CL = 50 pF 1.0 - 14.0 ns VCC = 4.5 V to 5.5 V; CL = 50 pF 1.0 - 9.0 ns Tamb = −40 °C to +125 °C tPHL, tPLH propagation delay nA and nB to nY see Figure 6 VCC = 3.0 V to 3.6 V; CL = 15 pF 1.0 - 12.0 ns VCC = 4.5 V to 5.5 V; CL = 15 pF 1.0 - 8.0 ns VCC = 3.0 V to 3.6 V; CL = 50 pF 1.0 - 16.0 ns VCC = 4.5 V to 5.5 V; CL = 50 pF 1.0 - 10.5 ns |
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