SI1330EDL_17 datasheet(2/9 Pages) VISHAY

No. de pieza	SI1330EDL

Descripción Electrónicos	N-Channel 60 V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

Logo

2 / 9 page

www.vishay.com

2

Document Number: 72861

S10-0721-Rev. B, 29-Mar-10

Vishay Siliconix

Si1330EDL

Notes:

a. Pulse test: PW

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

a

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1

2.0

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 1

µA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

VDS = 60 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currentb

ID(on)

VGS = 10 V, VDS = 7.5 V

0.5

A

VGS = 4.5 V, VDS = 10 V

0.4

VGS = 3 V, VDS = 10 V

0.05

Drain-Source On-Resistanceb

RDS(on)

VGS = 10 V, ID = 0.25 A

1.0

2.5

Ω

VGS = 4.5 V, ID = 0.2 A

1.4

3

VGS = 3 V, ID = 0.025 A

3.0

8

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.25 A

350

mS

Diode Forward Voltage

VSD

IS = 0.23 A, VGS = 0 V

0.83

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V

ID ≅ 0.25 A

0.4

0.6

nC

Gate-Source Charge

Qgs

0.11

Gate-Drain Charge

Qgd

0.15

Gate Resistance

Rg

173

Ω

Turn-On Time

td(on)

VDD = 30 V, RL = 150 Ω

ID ≅ 0.2 A, VGEN = 10 V

Rg = 10 Ω

3.8

10

ns

tr

4.8

15

Turn-Off Time

td(off)

12.8

20

tf

9.6

15

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 V, 7 V

3 V

5 V

4 V

6 V

Transfer Characteristics

012345

VGS - Gate-to-Source Voltage (V)

TJ = - 55 °C

125 °C

25 °C

1.0

0.8

0.6

0.2

0

0.4

Número de pieza similar - SI1330EDL_17

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI1330EDL	99Kb / 5P	N-Channel 60 V (D-S) MOSFET Rev. B, 29-Mar-10

More results

Descripción similar - SI1330EDL_17

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI7478DP	231Kb / 5P	N-Channel 60-V (D-S) MOSFET Rev. B, 07-Nov-05
Vishay Siliconix	2N7000KL	73Kb / 4P	N-Channel 60-V (D-S) MOSFET Rev. A, 16-Feb-04
DinTek Semiconductor Co...	DTL9604	246Kb / 8P	N-Channel 60 V (D-S) MOSFET
Bruckewell Technology L...	MSD20N06	566Kb / 5P	N-Channel 60-V (D-S) MOSFET
Bruckewell Technology L...	MSD30N06	702Kb / 8P	N-Channel 60-V (D-S) MOSFET
Vishay Siliconix	SIR664DP	161Kb / 9P	N-Channel 60 V (D-S) MOSFET Rev. A, 13-May-13
Analog Power	AM110N06-08FP	577Kb / 5P	N-Channel 60-V (D-S) MOSFET
Analog Power	AM2362N	311Kb / 5P	N-Channel 60-V (D-S) MOSFET
Vishay Siliconix	SUM50020EL	189Kb / 9P	N-Channel 60 V (D-S) MOSFET Rev. A, 10-Aug-15
Vishay Siliconix	SIS862DN	565Kb / 13P	N-Channel 60 V (D-S) MOSFET Rev. A, 27-May-13
Analog Power	AM7960N	310Kb / 5P	N-Channel 60-V (D-S) MOSFET

More results

SI1330EDL Datasheet(PDF) 2 Page - Vishay Siliconix

SI1330EDL Datasheet(HTML) 2 Page - Vishay Siliconix

Número de pieza similar - SI1330EDL_17

Descripción similar - SI1330EDL_17

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL