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AM29DS163DT120WAK Datasheet(Hoja de datos) 3 Page - Advanced Micro Devices

No. de Pieza. AM29DS163DT120WAK
Descripción  16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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Fabricante  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 22326
Rev: A Amendment/1
Issue Date: November 8, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DS163D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
Secured Silicon (SecSi) Sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data.
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed.
— 64 Kbyte sector size
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
Package options
— 48-ball FBGA
Top or bottom boot block
Manufactured on 0.23 µm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 100 ns
— Program time: 13 µs/word typical utilizing Accelerate function
Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per sector
20 Year data retention at 125
°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system




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