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SBX2540-3G Datasheet(PDF) 1 Page - Diotec Semiconductor

No. de pieza SBX2540-3G
Descripción Electrónicos  Schottky Barrier Rectifier Diodes 3rd Generation
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SBX2540-3G Datasheet(HTML) 1 Page - Diotec Semiconductor

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SBX2540-3G
SBX2540-3G
Schottky Barrier Rectifier Diodes 3
rd Generation
Schottky-Gleichrichterdioden 3. Generation
IFAV
= 25 A
VF@5A < 0.45 V
Tjmax = 150°C
VRRM = 40 V
IFSM
= 290/330 A
VF125 ~ 0.25 V @ 5 A
Version 2018-04-12
Ø 5.4 x 7.5
(Low RthL)
Dimensions - Maße [mm]
Typical Applications
Solar Bypass Diodes, Polarity Protection,
Free-wheeling diodes,
Output Rectification in DC/DC
Converters
Commercial grade
1)
Typische Anwendungen
Solar-Bypassdioden,
Verpolschutz, Freilaufdioden,
Ausgangsgleichrichtung in
Gleichstromwandlern
Standardausführung
1)
Features
Best trade-off between VF and IR
2)
Lowest RthL for lowest Tj
Smaller package outline
than SBX2540
Compliant to RoHS, REACH,
Conflict Minerals
1)
Besonderheiten
Optimale Auswahl von VF und IR
2)
Niedrigster RthL für niedrigstes Tj
Gehäusegröße kleiner
als SBX2540
Konform zu RoHS, REACH,
Konfliktmineralien
1)
Mechanical Data
1)
Mechanische Daten
1)
Taped in ammo pack
On request: on 13” reel
500
1000
Gegurtet in Ammo-Pack
Auf Anfrage: auf 13” Rolle
Weight approx.
2 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings
3)
Grenzwerte
3)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
SBX2540-3G
40
40
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
25 A
4)
Peak forward surge current,
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
290 A
330 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
i
2t
420 A
2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C
2,5)
Storage temperature
Lagerungstemperatur
TS
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes”
3
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
4
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
5
Meets the Requirements of IEC 61215 bypass diode thermal test
Erfüllt die Anforderungen des IEC 61215 Bypass-Diodentests
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Halogen
FREE
Ø 1.6
±0.05
Ø 5.4
±0.1


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