S29GL01GP datasheet(62/82 Pages) CYPRESS

No. de pieza	S29GL01GP

Descripción Electrónicos	1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology

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Fabricante Electrónico	CYPRESS [Cypress Semiconductor]

Página de inicio	http://www.cypress.com

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62 / 82 page

Document Number: 002-00886 Rev. *B

Page 62 of 83

S29GL01GP

S29GL512P

S29GL256P

S29GL128P

11.7.5

Erase And Programming Performance

N

otes

1. Typical program and erase times assume the following conditions: 25°C, 3.6 V VCC, 10,000 cycles, checkerboard pattern.

2. Under worst case conditions of -40°C, VCC = 3.0 V, 100,000 cycles.

3. Effective write buffer specification is based upon a 32-word write buffer operation.

4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables –.

11.7.6

TSOP Pin and BGA Package Capacitance

Notes

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 100 MHz.

Erase And Programming Performance

Parameter

Typ

(Note 1)

Max

(Note 2)

Unit

Comments

Sector Erase Time

0.5

3.5

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

S29GL128P

64

256

sec

S29GL256P

128

512

S29GL512P

256

1024

S29GL01GP

512

2048

Total Write Buffer Time (Note 3)

480

µs

Excludes system level

overhead (Note 5)

Total Accelerated Write Buffer Programming Time

(Note 3)

432

µs

Chip Program Time

S29GL128P

123

sec

S29GL256P

246

S29GL512P

492

S29GL01GP

984

Package Capacitance

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

6

10

pF

COUT

Output Capacitance

VOUT = 0

10

12

pF

CIN2

Control Pin Capacitance

VIN = 0

8

10

pF

WP#/ACC

Separated Control Pin

VIN = 0

42

45

pF

RESET#

Separated Control Pin

VIN = 0

25

28

pF

CE#

Separated Control Pin

VIN = 0

22

25

pF

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S29GL01GP Datasheet(PDF) 62 Page - Cypress Semiconductor

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