CYStech Electronics Corp.

Spec. No. : C745J3

Issued Date : 2018.03.14

Revised Date :

Page No. : 2/9

MTB020N10RJ3

CYStek Product Specification

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

100

Gate-Source Voltage

±20

V

34

24

(Note 2)

8.1

(Note 2)

6.8

(Note 3)

6.6

(Note 3)

5.5

Pulsed Drain Current

(Note 1)

110

Avalanche Current @ L=0.1mH

32

A

112

Repetitive Avalanche Energy@ L=0.05mH

6

mJ

°C

60

°C

30

°C

(Note 2)

2.5

°C

(Note 2)

1.0

°C

(Note 3)

1.7

°C

(Note 3)

0.7

W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+175

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

2.5

50

75

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. When the device is mounted on a 1 in² FR-4 board with 2 oz. copper.

3. When the device is mounted on the minimum pad size recommended.

in setting the upper dissipation limit for cases where additional heatsinking is used.

any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used

if the PCB allows it.

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

100

-

-

V

-

0.1

-

V/°C