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MTB020N10RJ3-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB020N10RJ3-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2018.03.14 Revised Date : Page No. : 2/9 MTB020N10RJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=10V 34 Continuous Drain Current @ TC=100 °C, VGS=10V ID 24 Continuous Drain Current @ TA=25 °C, VGS=10V (Note 2) 8.1 Continuous Drain Current @ TA=70 °C, VGS=10V (Note 2) 6.8 Continuous Drain Current @ TA=25 °C, VGS=10V (Note 3) 6.6 Continuous Drain Current @ TA=70 °C, VGS=10V (Note 3) IDSM 5.5 Pulsed Drain Current (Note 1) IDM 110 Avalanche Current @ L=0.1mH IAS 32 A Avalanche Energy @ L=1mH, ID=15A, VDD=25V EAS 112 Repetitive Avalanche Energy@ L=0.05mH EAR 6 mJ Total Power Dissipation @ TC=25 °C 60 Total Power Dissipation @ TC=100 °C PD 30 Total Power Dissipation @ TA=25 °C (Note 2) 2.5 Total Power Dissipation @ TA=70 °C (Note 2) 1.0 Total Power Dissipation @ TA=25 °C (Note 3) 1.7 Total Power Dissipation @ TA=70 °C (Note 3) PDSM 0.7 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note 2) 50 Thermal Resistance, Junction-to-ambient, max (Note 3) RθJA 75 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. When the device is mounted on a 1 in² FR-4 board with 2 oz. copper. 3. When the device is mounted on the minimum pad size recommended. 4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V. 5. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 6. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.1 - V/°C Reference to 25°C, ID=250μA |
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