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BUK7511-55A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK7511-55A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page Philips Semiconductors BUK7511-55A; BUK7611-55A TrenchMOS™ standard level FET Product specification Rev. 01 — 1 February 2001 5 of 15 9397 750 07817 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C55 −− V Tj = −55 °C50 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C2 3 4 V Tj = 175 °C1 −− V Tj = −55 °C −− 4.4 V IDSS drain-source leakage current VDS = 55 V; VGS =0V Tj =25 °C − 0.05 10 µA Tj = 175 °C −− 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V − 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Figure 7 and 8 Tj =25 °C − 911 m Ω Tj = 175 °C −− 22 m Ω Dynamic characteristics Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 − 2230 3093 pF Coss output capacitance − 510 645 pF Crss reverse transfer capacitance − 290 467 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =10V; RG =10 Ω; − 18 − ns tr rise time − 90 − ns td(off) turn-off delay time − 84 − ns tf fall time − 68 − ns Ld internal drain inductance from drain lead 6 mm from package to centre of die − 4.5 − nH from contact screw on mounting base to centre of die SOT78 − 3.5 − nH from upper edge of drain mounting base to centre of die SOT404 − 2.5 − nH Ls internal source inductance from source lead to source bond pad − 7.5 − nH |
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