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BUK7511-55A Datasheet(PDF) 7 Page - NXP Semiconductors

No. de pieza BUK7511-55A
Descripción Electrónicos  TrenchMOS standard level FET
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7511-55A Datasheet(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Product specification
Rev. 01 — 1 February 2001
7 of 15
9397 750 07817
© Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03nd20
0
10
20
30
40
50
0
2040
6080
100
ID (A)
gfs
(S)
03nd25
0
500
1000
1500
2000
2500
3000
3500
4000
4500
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss


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