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FAN3216 Datasheet(PDF) 12 Page - ON Semiconductor

No. de pieza FAN3216
Descripción Electrónicos  Dual 2-A, High-Speed, Low-Side Gate Drivers
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FAN3216 Datasheet(HTML) 12 Page - ON Semiconductor

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Applications Information
Input Thresholds
The FAN3216 and the FAN3217 drivers consist of tw o
identical channels that may be used independently at
rated current or connected in parallel to double the
individual current capacity.
The input thresholds meet industry-standard TTL- logic
thresholds independent of the V DD voltage, and there is
a hysteresis voltage of approximately 0.4 V. These
levels per mit the inputs to be driven from a range of
input logic s ignal levels for w hich a voltage over 2 V is
considered logic HIGH. The driving signal for the TTL
inputs should have fast rising and falling edges w ith a
slew rate of 6 V/µs or faster, so a rise time from 0 to
3.3 V should be 550 ns or less. With reduced slew rate,
circuit noise could cause the driver input voltage to
exceed the hysteresis voltage and retrigger the dr iver
input, causing erratic operation.
Static Supply Current
In the IDD (static) typical performance characteristics
show n in Figure 10 and Figure 11, each curve is
produced w ith both inputs floating and both outputs
LOW to indicate the low est static IDD current. For other
states, additional current flow s through the 100k
resistors on the inputs and outputs show n in the block
diagram of each part (see Figure 6 and Figure 7). In
these cases, the actual static IDD current is the value
obtained from the curves plus this additional current.
M
illerDrive™ Gate Drive Technology
FA N3216 and FA N3217 gate drivers incorporate the
Miller Drive™ architecture show n in Figure 31. For the
output stage, a combination of bipolar and MOS devices
provide large currents over a w ide range of supply
voltage and temperature variations. The bipolar devices
carry the bulk of the current as OUT sw ings betw een 1/3
to 2/3 VDD and the MOS devices pull the output to the
HIGH or LOW rail.
The purpose of the Miller Drive™ architecture is to
speed up sw itching by providing high current during the
Miller plateau region w hen the gate-drain capacitance of
the MOSFET is being charged or discharged as part of
the turn-on / turn-off process.
For applications w ith zero voltage sw itching during the
MOSFET turn-on or turn-off interval, the driver supplies
high peak current for fast sw itching even though the
Miller plateau is not present. This situation often occurs
in synchronous rectifier applications because the body
diode is generally conducting before the MOSFET is
sw itched ON.
The output pin slew rate is determined by V DD voltage
and the load on the output. It is not user adjustable, but
a series resistor can be added if a slow er rise or fall time
at the MOSFET gate is needed.
Input
stage
V
DD
V
OUT
Figure 31.
MillerDrive™ Output Architecture
Under-Voltage Lockout
The FAN321x startup logic is opt imized to drive ground-
referenced N-channel MOSFETs w ith an under-voltage
lockout ( UVLO) function to ensure that the IC starts up
in an orderly fashion. When V DD is rising, yet below the
3.9 V operational level, this circuit holds the output
LOW, regardless of the status of the input pins. After the
part is active, the supply voltage must drop 0.2 V before
the part shuts dow n. This hysteresis helps prevent
chatter w hen low VDD supply voltages have noise from
the pow er sw itching. This configuration is not su itable
for driving high-side P-channel MOSFETs because the
low output voltage of the driver w ould turn the P-channel
MOSFET on w ith VDD below 3.9 V.
VDD Bypass Capacitor Guidelines
To enable this IC to turn a device ON quickly, a local
high-frequency bypass capacitor, CBYP, w ith low ESR and
ESL should be connected betw een the VDD and GND
pins w ith minimal trace length. This capacitor is in
addition to bulk electrolytic capacitance of 10 µF to 47 µF
commonly found on driver and controller bias circuits.
A typical criterion for choosing the value of CBYP is to
keep the ripple voltage on the V DD supply to ≤ 5%. This
is often achieved w ith a value ≥ 20 times the equivalent
load capacitance CEQV, defined here as QGATE/VDD.
Ceramic capacitors of 0.1 µF to 1 µF or larger are
common choices, as are dielectrics, such as X5R and
X7R, w ith good temperature characteristics and high
pulse current capability.
If circuit noise affects normal operation, the value of
CBYP may be increased, to 50-100 times the CEQV, or
CBYP may be split into tw o capacitors. One should be a
larger value, based on equivalent load capacitance, and
the other a s maller value, such as 1-10 nF mounted
closest to the VDD and GND pins to carry the higher -
frequency components of the current pulses. The
bypass capacitor must provide the pulsed current from
both of the driver channels and, if the drivers are
sw itching simultaneously, the combined peak current
sourced from the CBYP w ould be tw ice as large as w hen
a single channel is sw itching.


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