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STD100NH03L Datasheet(Hoja de datos) 2 Page - STMicroelectronics

No. de Pieza. STD100NH03L
Descripción  N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET™ III POWER MOSFET
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STD100NH03L
2/11
THERMAL DATA
(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (*)
DYNAMIC
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb(#)
Maximum Lead Temperature For Soldering Purpose
Max
Max
Max
1.5
100
43
275
°C/W
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
1
1.8
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 30 A
VGS = 5 V
ID = 30 A
0.005
0.0060
0.0055
0.0105
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (5)
Forward Transconductance
VDS = 10 V
ID = 30 A
40
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V f = 1 MHz VGS = 0
4100
680
70
pF
pF
pF
RG
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.3




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