Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N2128A(R) 1N2129A(R)

Unit

Repetitive peak reverse voltage

50

100

V

2. Reverse polarity (R): Stud is anode.

1N2128A thru 1N2131AR

1N2131A(R)

150

1N2130A(R)

Silicon Standard

Recovery Diode

Conditions

200

pp

g

RMS reverse voltage

35

70

V

DC blocking voltage

50

100

V

Continuous forward current

60

60

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

1N2128A(R) 1N2129A(R)

Unit

Diode forward voltage

1.1

1.1

10

10

μA

15

15

mA

Thermal characteristics

Thermal resistance, junction -

case

0.65

0.65

°C/W

15

A

1050

Reverse current

1050

1N2131A(R)

10

10

Conditions

106

1050

1050

-55 to 150

60

60

-55 to 150

0.65

1.1

1.1

15

1N2130A(R)

0.65

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

-55 to 150

140

200

150

Surge non-repetitive forward

current, Half Sine Wave

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1