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SMOS21N50 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

No. de pieza SMOS21N50
Descripción Electrónicos  Power MOSFETs
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Fabricante Electrónico  ETC [List of Unclassifed Manufacturers]
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SMOS21N50 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

  SMOS21N50 Datasheet HTML 1Page - List of Unclassifed Manufacturers SMOS21N50 Datasheet HTML 2Page - List of Unclassifed Manufacturers  
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SMOS21N50, SMOS26N50
Power MOSFETs
Symbol
Test Conditions
Unit
min.
typ.
max.
VDSS
VGS=0V; ID=250uA
500
V
VGS(th)
VDS=VGS; ID=4mA
2
4
V
IGSS
VGS=±20VDC; VDS=0
±100
nA
IDSS
VDS=0.8VDSS; TJ=25
oC
200
uA
VGS=0V;
TJ=125
oC
1
mA
Symbol
Test Conditions
Unit
min.
typ.
max.
RDS(on)
VGS=10V; ID=0.5ID25
21N50
0.25
26N50
0.23
Pulse test, t
300us, duty cycle
2%
0.20
gts
VDS=10V; ID=0.5ID25; pulse test
11
21
S
Cies
4200
Coes
VGS=0V; VDS=25V; f=1MHz
450
pF
Cres
135
Qg(on)
135
160
Qgs
VGS=10V; VDS=0.5VDSS'; ID=0.5ID25
28
40
nC
Qgd
62
85
td(on)
16
25
ns
tr
VGS=10V; VDS=0.5VDSS; ID=0.5ID25
33
45
ns
td(off)
RG=2
(External)
65
80
ns
tf
30
40
ns
RthJC
0.42
K/W
RthCK
0.25
K/W
(TJ=25
oC, unless otherwise specified)
(TJ=25
oC, unless otherwise specified)
Characteristic Values
Characteristic Values
Source-Drain Diode
Symbol
Test Conditions
Unit
min.
typ.
max.
IS
VGS=0V
21N50
21
26N50
26
ISM
Repetitive;
21N50
84
pulse width limited by TJM
26N50
104
VSD
IF=IS; VGS=0V;
1.5
V
Pulse test, t
300us, duty cycle d
2%
trr
TJ=25
oC
250
ns
TJ=125
oC
400
ns
QRM
TJ=25
oC
1
uC
TJ=125
oC
2
uC
IRM
TJ=25
oC
10
A
TJ=125
oC
15
A
A
A
Characteristic Values
(TJ=25
oC, unless otherwise specified)
-di/dt=100A/us;
IF=IS;
VR=100V;


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