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STP2NK60Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP2NK60Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 16 page 3/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 33.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.7 A 7.2 8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID= 0.7 A 1 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 170 27 5 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 30 pF td(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.65 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 22) 8 30 22 55 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 1.5 A, VGS = 10V (see, Figure 24) 7.7 1.7 4 10 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 1.5 6 A A VSD (1) Forward On Voltage ISD = 1.5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.3 A, di/dt = 100 A/µs VDD = 25V, Tj = 25°C (see test circuit, Figure 23) 250 550 4.4 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.3 A, di/dt = 100 A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 23) 300 690 4.6 ns µC A |
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