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MCMA140P1400TA Datasheet(PDF) 2 Page - IXYS Corporation

No. de Pieza. MCMA140P1400TA
Descripción  Thyristor Module
Descarga  5 Pages
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Fabricante  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
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MCMA140P1400TA Datasheet(HTML) 2 Page - IXYS Corporation

   
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MCMA140P1400TA
V
=
V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
I
A
V
T
1.29
R
0.22
K/W
min.
140
V
V
100
T
= 25°C
VJ
T
=
°C
VJ
mA
10
V
=
V
T
= 25°C
VJ
I =
A
T
V
T =
°C
C
85
P
tot
520
W
T
= 25°C
C
150
1400
forward voltage drop
total power dissipation
Conditions
Unit
1.63
T
= 25°C
VJ
140
V
T0
V
0.85
T
=
°C
VJ
140
rT
2.8
mΩ
V
1.28
T
=
°C
VJ
I =
A
T
V
150
1.70
I =
A
300
I =
A
300
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
V
1400
T
= 25°C
VJ
I
A
220
P
GM
W
t = 30 µs
10
max. gate power dissipation
P
T
=
°C
C
140
W
t =
5
P
PGAV
W
0.5
average gate power dissipation
CJ
119
junction capacitance
V =
V
400
T
= 25°C
f = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine
T
= 45°C
VJ
max. forward surge current
T
=
°C
VJ
140
I²t
T
= 45°C
value for fusing
T
=
°C
140
V
= 0 V
R
V
= 0 V
R
V
= 0 V
V
= 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T
=
°C
VJ
140
2.40
2.59
20.8
20.2
kA
kA
kA
kA
2.04
2.21
28.8
27.9
1400
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)cr
A/µs
150
repetitive, I =
T
VJ = 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V
T
=
°C
25
(dv/dt)
T
= 140°C
critical rate of rise of voltage
A/µs
500
V/µs
t =
µs;
I
A; V = ⅔ V
R
= ∞; method 1 (linear voltage rise)
VJ
D
VJ
450 A
T
P
G = 0.45
di /dt
A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5
V
T
=
°C
-40
VJ
IGT
gate trigger current
V = 6 V
T
=
°C
25
D
VJ
150
mA
T
=
°C
-40
VJ
1.6
V
200
mA
V
GD
gate non-trigger voltage
T
=
°C
VJ
0.2
V
I
GD
gate non-trigger current
10
mA
V = ⅔ V
D
DRM
140
latching current
T
=
°C
VJ
200
mA
IL
25
t
µs
p =
10
I
A;
G
= 0.45
di /dt
A/µs
G
= 0.45
holding current
T
=
°C
VJ
200
mA
I
H
25
V = 6 V
D
R
= ∞
GK
gate controlled delay time
T
=
°C
VJ
2
µs
t
gd
25
I
A;
G
= 0.45
di /dt
A/µs
G
= 0.45
V = ½ V
D
DRM
turn-off time
T
=
°C
VJ
185
µs
tq
di/dt =
A/µs
10
dv/dt =
V/µs
20
V =
R
100 V; I
A;
T = 150
V = ⅔ V
DRM
t
µs
p = 200
non-repet., I = 150 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1500
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions.
20161222b
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved


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