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2SC6033 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC6033 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC6033 2004-07-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V DC IC 2.5 Collector current Pulse ICP 5 A Base current IB 0.3 A t = 10s 1.00 Collector power dissipation DC Pc (Note 1) 0.625 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm 2) - - - TSM 1.6-0.1 2.8-0.3 3 2 1 +0.2 +0.2 1. Base 2. Emitter 3. Collector Unit : mm Weight: 0.01g (Typ.) 2-3S1A JEDEC JEITA TOSHIBA |
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