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BUK7506-55B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK7506-55B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page Philips Semiconductors BUK75/7606-55B TrenchMOS™ standard level FET Product data Rev. 01 — 31 March 2003 2 of 15 9397 750 11132 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 3. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - 55 V VDGR drain-gate voltage (DC) RGS =20kΩ -55 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb =25 °C; VGS =10V; Figure 2 and 3 [1] - 145 A [2] -75 A Tmb = 100 °C; VGS =10V; Figure 2 [2] -75 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 582 A Ptot total power dissipation Tmb =25 °C; Figure 1 - 254 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current (DC) Tmb =25 °C [1] - 145 A [2] -75 A IDRM peak reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs - 582 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID =75A; VDS ≤ 55 V; VGS = 10 V; RGS =50 Ω; starting Tmb =25 °C - 680 mJ |
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