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BUK9520-100A Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9520-100A Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors BUK9520-100A; BUK9620-100A TrenchMOS™ logic level FET Product specification Rev. 01 — 7 February 2001 7 of 15 9397 750 07915 © Philips Electronics N.V. 2001. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C; VDS =VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C; VDS =25V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa33 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 max typ min V GS(th) T j ( o C) (V) 03aa36 0 0.5 1 1.5 2 2.5 3 max typ min I D V GS (V) 10-6 10-5 10-4 10-3 10-2 10-1 (A) 03nd82 0 20 40 60 80 100 120 0 20406080 ID (A) gfs (S) 03nd87 0 2000 4000 6000 8000 10000 12000 10-2 10-1 1 10 102 VDS (V) C (pF) Ciss Coss Crss |
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