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NTQD6866R2 Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza NTQD6866R2
Descripción Electrónicos  Power MOSFET 6.9 Amps, 20 Volts
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTQD6866R2 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTQD6866R2/D
NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N–Channel TSSOP–8
Features
New Low Profile TSSOP–8 Package
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperatures
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Battery Applications
NoteBook PC
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
Vdc
Gate–to–Source Voltage – Continuous
VGS
"12
Vdc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
IDM
62.5
2.0
6.9
24
°C/W
W
Adc
Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 2)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
88
1.42
5.8
4.6
20
°C/W
W
Adc
Adc
Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 3)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
132
0.94
4.7
3.8
14
°C/W
W
Adc
Adc
Adc
1. Mounted onto a 2
″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t
< 10 seconds.
2. Mounted onto a 2
″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t = 10 seconds.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
TSSOP–8
CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
N–Channel
D
S1
G1
8
2
S1
G1
S2
G2
3
4
1
7
6
5
8D
D
D
D
Top View
NTQD6866R2
TSSOP–8
4000/Tape & Reel
N–Channel
D
S2
G2
866
YWW
6.9 AMPERES
20 VOLTS
30 m
Ω @ VGS = 4.5 V
866
= Device Code
YWW
= Date Code
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