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SI7900EDN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7900EDN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7900EDN Vishay Siliconix New Product www.vishay.com 2 Document Number: 71425 S-03369—Rev. A, 02-Apr-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.40 V VDS = 0 V, VGS = "4.5 V "1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "10 mA VDS = 16 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C 20 mA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 20 A VGS = 4.5 V, ID = 6.5 A 0.021 0.026 Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 5.8 A 0.025 0.031 W DS(on) VGS = 1.8 V, ID = 5.0 A 0.031 0.039 Forward Transconductancea gfs VDS = 10 V, ID = 6.5 A 25 S Diode Forward Voltagea VSD IS = 1.5 A, VGS = 0 V 0.65 1.1 V Dynamicb Total Gate Charge Qg 12.5 18 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2.7 nC Gate-Drain Charge Qgd 2.7 Turn-On Delay Time td(on) 0.7 1.0 Rise Time tr VDD = 10 V, RL = 10 W 1.3 2.0 m Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 5.5 8.0 ms Fall Time tf 4.6 7.0 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.01 100 10,000 Gate Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 Gate-Current vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS – Gate-to-Source Voltage (V) 15 0 36 9 12 TJ = 25_C TJ = 150_C 8 6 4 2 0 |
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