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SI7900EDN Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI7900EDN
Descripción Electrónicos  Dual N-Channel 20-V (D-S) MOSFET, Common Drain
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI7900EDN Datasheet(HTML) 2 Page - Vishay Siliconix

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Si7900EDN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.40
V
VDS = 0 V, VGS = "4.5 V
"1
mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"10
mA
VDS = 16 V, VGS = 0 V
1
m
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V, TJ = 85_C
20
mA
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
20
A
VGS = 4.5 V, ID = 6.5 A
0.021
0.026
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 5.8 A
0.025
0.031
W
DS(on)
VGS = 1.8 V, ID = 5.0 A
0.031
0.039
Forward Transconductancea
gfs
VDS = 10 V, ID = 6.5 A
25
S
Diode Forward Voltagea
VSD
IS = 1.5 A, VGS = 0 V
0.65
1.1
V
Dynamicb
Total Gate Charge
Qg
12.5
18
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 6.5 A
2.7
nC
Gate-Drain Charge
Qgd
2.7
Turn-On Delay Time
td(on)
0.7
1.0
Rise Time
tr
VDD = 10 V, RL = 10 W
1.3
2.0
m
Turn-Off Delay Time
td(off)
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
5.5
8.0
ms
Fall Time
tf
4.6
7.0
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
3
6
9
12
15
18
Gate-Current vs. Gate-Source Voltage
VGS – Gate-to-Source Voltage (V)
0.1
1
10
1,000
VGS – Gate-to-Source Voltage (V)
15
0
36
9
12
TJ = 25_C
TJ = 150_C
8
6
4
2
0


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