MCR100 datasheet(3/6 Pages) ONSEMI

No. de pieza	MCR100

Descripción Electrónicos	Sensitive Gate Silicon Controlled Rectifiers

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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MCR100 Series

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

75

200

°C/W

Lead Solder Temperature

(

t1/16″ from case, 10 secs max)

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 2)

TC = 25°C

(VD = Rated VDRM and VRRM; RGK = 1 kW)TC = 110°C

IDRM, IRRM

−

10

100

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage*

(ITM = 1.0 A Peak @ TA = 25°C)

VTM

−

1.7

V

Gate Trigger Current (Continuous dc) (Note 3)

TC = 25°C

(VAK = 7.0 Vdc, RL = 100 W)

IGT

−

40

200

mA

Holding Current(2)

TC = 25°C

(VAK = 7.0 Vdc, Initiating Current = 20 mA)

TC = −40°C

IH

−

0.5

−

5.0

10

mA

Latch Current

TC = 25°C

(VAK = 7.0 V, Ig = 200 mA)

TC = −40°C

IL

−

0.6

−

10

15

mA

Gate Trigger Voltage (Continuous dc) (Note 3)

TC = 25°C

(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C

VGT

−

0.62

−

0.8

1.2

V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C)

dV/dt

20

35

−

V/

ms

Critical Rate of Rise of On−State Current

(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)

di/dt

−

50

A/

ms

*Indicates Pulse Test: Pulse Width

≤ 1.0 ms, Duty Cycle ≤ 1%.

2. RGK = 1000 W included in measurement.

3. Does not include RGK in measurement.

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak on State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

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