Specification Comparison

Vishay Siliconix

Document Number 74062

www.vishay.com

10-May-05

Si5402BDC vs. Si5402DC

Description:

N-Channel, 30-V (D-S) MOSFET

Package:

1206-8 ChipFET

®

Pin Out:

Identical

Part Number Replacements:

Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3

Si5402BDC-T1-E3 Replaces Si5402DC-T1

Summary of Performance:

The Si5402BDC is the replacement to the original Si5402DC; both parts perform identically, including limits to the parametric

tables below.

Parameter

Symbol

Si5402BDC

Si5402DC

Unit

Drain-Source Voltage

30

30

Gate-Source Voltage

+20

+20

V

6.7

6.7

Continuous Drain Current

4.8

4.8

Pulsed Drain Current

20

20

Continuous Source Current

(MOSFET Diode Conduction)

2.1

2.1

A

2.5

2.5

Power Dissipation

1.3

1.3

W

Operating Junction & Storage Temperature Range

-55 to 150

-55 to 150

°C

Maximum Junction-to-Ambient

50

50

°C/W

Si5402BDC

Si5402DC

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Static

Gate-Threshold Voltage

1.0

3.0

1.0

NS

V

Gate-Body Leakage

+100

+100

nA

Zero Gate Voltage Drain Current

-1

-1

µA

On-State Drain Current

20

20

A

0.029

0.035

0.030

0.035

Drain-Source On-Resistance

0.035

0.042

0.045

0.055

Ω

Forward Transconductance

19

15

S

Diode Forward Voltage

0.8

1.2

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

10

20

13

20

Gate-Source Charge

Qgs

1.9

1.3

Gate-Drain Charge

Qgd

1.6

3.1

nC

Gate Resistance

Rg

14

NS

Ω

Switching

10

15

10

15

Turn-On Time

10

15

10

15

27

40

25

40

Turn-Off Time

10

15

10

15

Source-Drain Reverse Recovery Time

20

60

30

60

ns