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2SJ245 Datasheet(PDF) 3 Page - Hitachi Semiconductor

No. de pieza 2SJ245
Descripción Electrónicos  SILICON P-CHANNEL MOS FET
Download  7 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ245 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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50
100
150
20
10
30
Case Temperature Tc (°C)
Power vs. Temperature Derating
–100
–10
–1
–0.1
–1
–10
–100
Drain to Source Voltage
V
(V)
DS
10 µs
100
µs
1 ms
Operation in this area is
limited by RDS(on)
Ta = 25°C
Maximum Safe Operation Area
–30
–3
–0.3
–0.3
–3
–30
–10
–8
–6
–4
–2
0
–2–4–6
–8
–10
Drain to Source Voltage
V
(V)
DS
V
= –2.5 V
GS
–3 V
–3.5 V
–4 V
Pulse test
–10 V
–5 V
–6 V
Typical Output Characteristics
–5
–4
–3
–2
–1
0
–1–2–3
–4
–5
Gate to Source Voltage
V
(V)
GS
Pulse test
V
= –10 V
DS
Tc = –25°C
25°C
75°C
Typical Transfer Characteristics
2SJ245 L , 2SJ245 S


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