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2SJ280S Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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2SJ280S Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 8 page Reverse Drain Current vs. Source to Drain Voltage –50 –40 –30 –20 –10 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V (V) SD Pulse Test –5 V 0, 5V V = –10 V GS Channel Temperature Tch (°C) I = –30 A V = –25 V duty < 0.1% Rg 50 DD Ω AP > = Maxmum Avalanche Energy vs. Channel Temperature Derating 100 80 60 40 20 0 25 50 75 100 125 150 V Monitor DS I Monitor AP VDD Rg Vin –15 V 50 D.U.T VDD 0 I D I AP VDS V(BR)DSS VDSS – VDD VDSS E = AR 2 1 • L • I • AP 2 L Ω Avalanche Test Circuit and Waveform 2SJ280 L , 2SJ280 S |
Número de pieza similar - 2SJ280S |
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Descripción similar - 2SJ280S |
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