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SRF1050CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SRF1050CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier SRF1050CT FEATURES · Plastic material used carriers Underwriter Laboratory · Metal silicon junction, majority carrier conduction · Low Power Loss,high Efficiency · Guard ring for overvoltage protection · High Surge Capability,High Current Capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 50 35 50 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 125 A TJ Junction Temperature -55~125 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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