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2SD1666 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SD1666 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SB1133 / 2SD1666 No.3031-1/4 Features • Wide ASO(Adoption of MBIT process). • Micaless package facilitating easy mounting. • High reliability. Specifications ( ) : 2SB1133 Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( −)60 V Collector-to-Emitter Voltage VCEO ( −)60 V Emitter-to-Base Voltage VEBO ( −)6 V Collector Current IC ( −)3 A Collector Current (Pulse) ICP ( −)8 A Collector Dissipation PC 2W Tc=25 °C25 W Junction Temperature Tj 150 °C Storage Temperature Tstg −40 to +150 °C Electrical Characteristics a t Ta=25 °C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0 (--)100 µA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)100 µA DC Current Gain hFE(1) VCE=(--)5V, IC=(--)0.5A *70 *280 hFE(2) VCE=(--)5V, IC=(--)3A 20 Continued on next page. * : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN3031A 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit : mm 2041A [2SB1133 / 2SD1666] 72501 GI IM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 1.6 1.2 0.75 10.0 3.2 2.55 2.55 2.4 4.5 2.8 0.7 2.55 2.55 1 23 PNP / NPN Triple Diffused Planar Silicon Transistors |
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