2SC5023 datasheet(1/3 Pages) HITACHI

No. de pieza	2SC5023

Descripción Electrónicos	High frequency amplifier

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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Application

High frequency amplifier

Features

• Excellent high frequency characteristics

fT = 1000 MHz typ

• High breakdown voltage and low output

capacitance

VCEO = 100 V, Cob = 4.5 pF typ

• Suitable for wide band video amplifier

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

———————————————————————————————————————————

Collector to base voltage

VCBO

100

V

———————————————————————————————————————————

Collector to emitter voltage

VCEO

100

V

———————————————————————————————————————————

Emitter to base voltage

VEBO

5V

———————————————————————————————————————————

Collector current

IC

0.2

A

———————————————————————————————————————————

Collector peak current

ic(peak)

0.5

A

———————————————————————————————————————————

Collector power dissipation

PC

1.25

W

———————————————————————————————————————————

Collector power dissipation

PC*1

8W

———————————————————————————————————————————

Junction temperature

Tj

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

Note: 1. Value at TC = 25°C.

1

2

3

1. Emitter

2. Collector

3. Base

TO–126FM

2SC5023

Silicon NPN Epitaxial

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2SC5023 Datasheet(PDF) 1 Page - Hitachi Semiconductor

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