ACE30P35B datasheet(1/6 Pages) ACE

No. de pieza	ACE30P35B

Descripción Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

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ACE30P35B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE30P35B uses advanced trench technology and design to provide excellent RDS(ON) with low

gate charge. It can be used in a wide variety of applications.

Features



VDS= -30V , ID= -35A



RDS(ON)@ VGS = -10V , IDS= -15A , TYP= 16.5

mΩ



RDS(ON)@ VGS = -4.5V , IDS= -10A , TYP= 25.5

mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

-35

A

TA=100℃

-22

Drain Current (Pulsed)*B

IDM

-70

A

Power Dissipation

TA=25℃

PD

35

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

TO-252

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ACE30P35B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE30P35B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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