S71PL129JB0BAW9Z0 datasheet(15/149 Pages) SPANSION

No. de pieza	S71PL129JB0BAW9Z0

Descripción Electrónicos	Stacked Multi-Chip Product (MCP) Flash Memory

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Fabricante Electrónico	SPANSION [SPANSION]

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June 4, 2004 S29PL129J_MCP_00_A0

S29PL129J for MCP

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Informatio n

write cycles to program data instead of four. Device erasure occurs by executing

the erase command sequence.

The host system can detect whether a program or erase operation is complete by

reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program

or erase cycle has been completed, the device is ready to read array data or ac-

cept another command.

The sector erase architecture allows memory sectors to be erased and repro-

grammed without affecting the data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automat-

ically inhibits write operations during power transitions. The hardware sector

protection feature disables both program and erase operations in any combina-

tion of sectors of memory. This can be achieved in-system or via programming

equipment.

The Erase Suspend/Erase Resume feature enables the user to put erase on

hold for any period of time to read data from, or program data to, any sector that

is not selected for erasure. True background erase can thus be achieved. If a read

is needed from the Secured Silicon Sector area (One Time Program area) after

an erase suspend, then the user must use the proper command sequence to

enter and exit this region.

The device offers two power-saving features. When addresses have been stable

for a specified amount of time, the device enters the automatic sleep mode.

The system can also place the device into the standby mode. Power consumption

is greatly reduced in both these modes.

The device electrically erases all bits within a sector simultaneously via Fowler-

Nordheim tunneling. The data is programmed using hot electron injection.

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