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2N3420JANTXV Datasheet(Hoja de datos) 2 Page - Microsemi Corporation

No. de Pieza. 2N3420JANTXV
Descripción  NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
Descarga  2 Pages
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Fabricante  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
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2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 1.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 2.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 5.0 Adc, VCE = 5.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
hFE
20
40
20
40
15
30
10
15
60
120
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
VBE(sat)
0.6
0.7
1.2
1.4
Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
VCE(sat)
0.25
0.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
h
fe
1.3
8.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
150
pF
SWITCHING CHARACTERISTICS
Delay Time
VBE(off) = -3.7 Vdc
td
0.08
µs
Rise Time
IC = 1.0 Adc, IB1 = 100 mAdc
tr
0.22
µs
Storage Time
VBE(off) = -3.7 Vdc
ts
1.10
µs
Fall Time
IC = 1.0 Adc, IB2 = -100 mAdc
tf
0.20
µs
SAFE OPERATING AREA
DC Tests
TC = 100
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 3.0 Adc
Test 2
VCE = 37 Vdc, IC = 0.4 Adc
TEST 3
VCE = 60 Vdc, IC = 0.185 Adc
2N3418, S; 2N3420, S
VCE = 80 Vdc, IC = 0.12 Adc
2N3419, S; 2N3421, S
Clamped Switching
TA = 25
0C, I
B = 0.5 Adc, IC = 3.0 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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