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2N6045 Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. 2N6045
Descripción  Plastic Medium-Power Complementary Silicon Transistors
Descarga  8 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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2N6045 Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N6040 2N6042 2N6043 2N6045
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
VCEO(sus)
60
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6040, 2N6043
(VCE = 100 Vdc, IB = 0)
2N6042, 2N6045
ICEO
20
20
µA
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6040, 2N6043
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
2N6042, 2N6045
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6040, 2N6043
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6041, 2N6044
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6042, 2N6045
ICEX
20
20
200
200
200
µA
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N6040, 2N6043
(VCB = 100 Vdc, IE = 0)
2N6042, 2N6045
ICBO
20
20
µA
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
2N6040, 2N6043,
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6042, 2N6045
(IC = 8.0 Adc, VCE = 4.0 Vdc)
All Types
hFE
1000
1000
100
20.000
20,000
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
2N6040, 2N6043,
(IC = 3.0 Adc, IB = 12 mAdc)
2N6042, 2N6045
(IC = 8.0 Adc, IB = 80 Adc)
All Types
VCE(sat)
2.0
2.0
4.0
Vdc
Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
4.5
Vdc
Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
Output Capacitance
2N6040/2N6042
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6043/2N6045
Cob
300
200
pF
Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
300
*Indicates JEDEC Registered Data.
Figure 2. Switching Times Equivalent Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.5
0.05
0.2 0.3
0.5 0.7 1.0
2.0 3.0
10
0.3
0.7
tf
tr
ts
td @ VBE(off) = 0 V
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 µs
0
RB
51
D1
+4.0 V
VCC
-30 V
RC
TUT
≈ 8.0 k ≈ 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
0.2
0.1
0.07
5.0 7.0
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
PNP
NPN


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