2N6438 datasheet(5/8 Pages) ONSEMI

No. de pieza	2N6438

Descripción Electrónicos	High-Power PNP Silicon Transistors

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2N6437 2N6438

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5

200

0.3

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10

0.7 1.0

2.0

3.0

5.0

10

20

50

30

20

1.0

0.3

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

2.0

1.2

0.8

0.4

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

2.0

Figure 10. “On” Voltages

IB, BASE CURRENT (AMP)

0

0.02

0.05

0.1

0.2 0.3

1.0

2.0

1.6

0.8

VBE, BASEEMITTER VOLTAGE (VOLTS)

100

70

TJ = 150°C

+ 25°C

-55°C

-0.2

-0.1

0

+0.1

+0.2

-0.3

-0.4

-0.5

VCE = 40 V

TJ = +150°C

+100°C

REVERSE

FORWARD

7.0

30

TJ = 25°C

IC = 2.0 A

5.0 A

10 A

20 A

+2.5

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

+2.0

+1.0

-0.5

-2.5

θVB FOR VBE

*θVC FOR VCE(sat)

*APPLIES FOR IC/IB v

hFE @VCE + 2.0V

2

Figure 12. Collector Cut-Off Region

Figure 13. Base Cutoff Region

VBE @ VCE = 2.0 V

1.8

1.4

0.7 1.0

2.0 3.0

5.0

10

20

7.0

30

VBE, BASEEMITTER VOLTAGE (VOLTS)

0

+0.08

+0.16

-0.08

-0.16

-0.24

VCE = 40 V

REVERSE

FORWARD

VCE = 2.0 V

VCE = 4.0 V

0.5

0.07

0.03

0.7

0.5

1.8

1.4

1.0

0.6

0.4

0.2

0.5

-55°C to +25°C

+25°C to +150°C

-55°C to + 25°C

0.3

0.7 1.0

2.0 3.0

5.0

10

20

7.0

30

0.5

+1.5

+0.5

-1.0

-1.5

-2.0

+25°C

102

101

100

10-1

10-2

10-3

101

100

10-1

10-2

10-3

10-4

+100°C

+25°C

TJ = +150°C

1.2

0.6

0.2

1.6

0

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