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2PD2150 Datasheet(Hoja de datos) 1 Page - NXP Semiconductors

No. de Pieza. 2PD2150
Descripción  20 V, 3 A NPN low VCEsat transistor
Descarga  11 Pages
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Fabricante  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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 1 page
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1.
Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
20
V
ICM
peak collector current
single pulse;
tp ≤ 1ms
--3
A
hFE
DC current gain
VCE =2V;
IC = 0.1 A
180
-
390




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