Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
2PD2150 Datasheet(PDF) 1 Page - NXP Semiconductors |
|
2PD2150 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424. 1.2 Features s Low collector-emitter saturation voltage VCEsat s High collector current capability: IC and ICM s High collector current gain (hFE) at high IC s High efficiency due to less heat generation s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s DC-to-DC conversion s MOSFET gate driving s Motor control s Charging circuits s Power switches (e.g. motors, fans) s Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 22 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V ICM peak collector current single pulse; tp ≤ 1ms --3 A hFE DC current gain VCE =2V; IC = 0.1 A 180 - 390 |
Número de pieza similar - 2PD2150 |
|
Descripción similar - 2PD2150 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |