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2PD601AQW Datasheet(Hoja de datos) 2 Page - NXP Semiconductors

No. de Pieza. 2PD601AQW
Descripción  NPN general purpose transistor
Descarga  8 Pages
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Fabricante  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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 2 page
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2002 Jun 26
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-70 (SOT323) plastic package.
PNP complement: 2PB709AW.
MARKING
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
2PD601AQW
*6D
2PD601ARW
*6E
2PD601ASW
*6F
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
Fig.1
Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C




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