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2SC5702 Datasheet(PDF) 2 Page - Hitachi Semiconductor

No. de pieza 2SC5702
Descripción Electrónicos  Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
Download  16 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC5702 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC5702
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
18.5
VI
C = 10 µA, IE = 0
Collector cutoff current
I
CBO

1
µAV
CB = 10 V, IE = 0
Collector cutoff current
I
CEO

1mA
V
CE = 4 V, RBE = ∞
Emitter cutoff current
I
EBO

10
mA
V
EB = 1.5V, IC = 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE = 1 V, IC = 5 mA
Collector output capacitance
Cob
0.85
1.2
pF
V
CB = 1 V, IE = 0
f = 1 MHz
Gain bandwidth product
f
T
6.5
8.0
GHz
V
CE = 1 V, IC = 5 mA
f = 1 MHz
Power gain
PG
11
13
dB
V
CE = 1 V, IC = 5 mA
f = 900 MHz
Noise figure
NF
1.05
1.9
dB
V
CE = 1 V, IC = 5 mA
f = 900 MHz


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