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2SC5827 Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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2SC5827 Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SC5827 Rev.0, Nov. 2001, page 6 of 10 Scale: 8 / div. S11 Parameter vs. Frequency S21 Parameter vs. Frequency Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Scale: 0.06 / div. S12 Parameter vs. Frequency Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) S22 Parameter vs. Frequency Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) 0 ° 30 ° –30 ° –60 ° –90 ° –120 ° –150 ° 180 ° 60 ° 90 ° 120 ° 150 ° 0 ° 30 ° –30 ° –60 ° –90 ° –120 ° –150 ° 180 ° 60 ° 90 ° 120 ° 150 ° .2 .4 .6 1 2 5 –10 –5 –3 –2 –1.5 10 5 3 2 1.5 –1 –.8 –.6 –.4 –.2 0 .2 .4 .6 .8 1 4 –4 3 4 .8 1.5 .2 .4 .6 1 2 5 –10 –5 –3 –2 –1.5 10 5 3 2 1.5 –1 –.8 –.6 –.4 –.2 0 .2 .4 .6 .8 1 4 –4 3 4 .8 1.5 |
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