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2SK0663 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SK0663 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 253 Silicon Junction FETs (Small Signal) unit: mm 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching I Features G Low noise-figure (NF) G High gate to drain voltage V GDO G S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Noise figure Symbol IDSS* IGSS VGDS VGSC gm Ciss Crss NF Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = 100 µA, V DS = 0 VDS = 10V, ID = 10 µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min 1 55 2.5 max 12 −10 −5 Unit mA nA V V mS pF pF dB typ 80 7.5 6.5 1.9 2.5 Marking Symbol (Example): 2B * IDSS rank classification Runk IDSS (mA) Marking Symbol P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR 1: Source 2: Drain EIAJ: SC-70 3: Gate SMini3-G1 Package 1.3±0.1 0.3 +0.1 –0.0 2.0±0.2 1 3 2 (0.65) (0.65) 0.15 +0.10 –0.05 10 ° Note) The part number in the parenthesis shows conventional part number. |
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