253

Silicon Junction FETs (Small Signal)

unit: mm

2SK0663 (2SK663)

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

I Features

G Low noise-figure (NF)

G High gate to drain voltage V

GDO

G S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

Parameter

Drain to Source voltage

Gate to Drain voltage

Gate to Source voltage

Drain current

Gate current

Allowable power dissipation

Junction temperature

Storage temperature

Symbol

Ratings

55

−55

−55

30

10

150

125

−55 to +125

Unit

V

V

V

mA

mA

mW

°C

°C

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

Gate to Source cut-off voltage

Mutual conductance

Input capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Noise figure

Symbol

NF

Conditions

µA, V

µA

f = 100Hz

min

1

55

2.5

max

12

−10

−5

Unit

mA

nA

V

V

mS

pF

pF

dB

typ

80

7.5

6.5

1.9

2.5

Marking Symbol (Example): 2B

Runk

Marking Symbol

P

1 to 3

2BP

Q

2 to 6.5

2BQ

R

5 to 12

2BR

1: Source

2: Drain

EIAJ: SC-70

3: Gate

SMini3-G1 Package

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10

°

Note) The part number in the parenthesis shows conventional part number.