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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
8 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
VGS =0V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 16. Gate charge waveform definitions.
03nj63
0
25
50
75
100
0123
VGS (V)
ID
(A)
Tj = 175
°C
Tj = 25
°C
03nj61
0
1
2
3
4
5
0
204060
QG (nC)
VGS
(V)
VDD = 14 V
VDD = 44 V
03nj60
0
25
50
75
100
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
IS
(A)
Tj = 175
°C
Tj = 25
°C
003aaa508
VGS
VGS(th)
Qgs1
Qgs2
Qgd
VDS
Qg(tot)
ID
Qgs
Vplat