6 / 15 page
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
6 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 15
-
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs;
VGS =0V; VR =30V
-64
-
ns
Qr
recovered charge
-
79
-
nC
Table 5:
Characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nj65
0
50
100
150
200
250
300
350
024
68
10
VDS (V)
ID
(A)
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
10
6
4
4.2
5
VGS (V) is
03nj64
4
5
6
7
3
7
11
15
VGS (V)
RDSon
(m
Ω)
03nj66
2
4
6
8
10
12
14
0
100
200
300
400
ID (A)
RDSon
(m
Ω)
VGS (V) is
3
3.2
10
5
4
3.4
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
Spanish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
