SI7404DN datasheet(2/4 Pages) VISHAY

No. de pieza	SI7404DN

Descripción Electrónicos	N-Channel 30-V (D-S) Fast Switching MOSFET

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Si7404DN

Vishay Siliconix

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Document Number: 71658

S-05681—Rev. C, 07-Feb-02

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

VDS = 24 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

40

A

VGS = 10 V, ID = 13.3 A

0.010

0.013

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 12.4 A

0.0125

0.015

W

VGS = 2.5 V, ID = 5 A

0.019

0.022

Forward Transconductancea

gfs

VDS = 15 V, ID = 13.3 A

50

S

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.75

1.2

V

Dynamicb

Total Gate Charge

Qg

20

30

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 13.3 A

5.8

nC

Gate-Drain Charge

Qgd

7.1

Turn-On Delay Time

td(on)

27

40

Rise Time

tr

VDD = 15 V, RL = 15 W

39

60

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

64

100

ns

Fall Time

tf

33

50

Source-Drain Reverse Recovery Time

trr

IF = 3.2 A, di/dt = 100 A/ms

45

90

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 10 thru 3 V

25

_C

TC = 125_C

1, 1.5 V

–55

_C

2 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

2.5 V

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