2SK3295-ZJ datasheet(1/8 Pages) NEC

No. de pieza	2SK3295-ZJ

Descripción Electrónicos	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

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©

1999, 2000

MOS FIELD EFFECT TRANSISTOR

2SK3295

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D14064EJ2V0DS00 (2nd edition)

Date Published

April 2001 NS CP(K)

Printed in Japan

DATA SHEET

The mark

!

! shows major revised points.

DESCRIPTION

The 2SK3295 is N-Channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 18 m

Ω MAX. (VGS = 10 V, ID = 18 A)

• Low gate charge

QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±35

A

Drain Current (Pulse)

Note

ID(pulse)

±140

A

Total Power Dissipation (TA = 25°C)

PT1

1.5

W

Total Power Dissipation (TC = 25°C)

PT2

35

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW

≤ 10

µs, Duty Cycle ≤ 1%

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3295

TO-220AB

2SK3295-S

TO-262

2SK3295-ZK

TO-263(MP-25ZK)

2SK3295-ZJ

TO-263(MP-25ZJ)

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