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FIR7N65LG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

No. de Pieza. FIR7N65LG
Descripción  Advanced N-Ch Power MOSFET-I
Descarga  8 Pages
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Fabricante  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Página de inicio  http://www.first-semi.com
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FIR7N65LG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

   
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Advanced N-Ch Power MOSFET-I
Features:
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=29nC (Typ.).
BVDSS=650V,ID=7A
RDS(on) : 1.2Ω (Max) @VG=10V
100% Avalanche Tested
PIN Connection TO-252(D-PAK)
G
S
Marking Diagram
A
= Assembly Location
Y
= Year
WW
= Work Week
= Specific Device Code
FIR7N65L
YAWWVA
FIR7N65L
VA
= Version & Assembly plant
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
650
V
ID
Drain Current
Tj=25
7.0
A
Tj=100
4.7
VGS(TH)
Gate Threshold Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note1)
420
mJ
IAR
Avalanche Current (note2)
7.0
A
PD
Power Dissipation (Tj=25℃)
50
W
Tj
Junction Temperature(Max)
150
Tstg
Storage Temperature
-55~+150
TL
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC
Thermal Resistance,Junction to Case
-
2.50
/W
RθJA
Thermal Resistance,Junction to Ambient
-
110
/W
REV:1.0
Page 1/8
@ 2018 Copyright By American First Semiconductor
FIR7N65LG
D
G
D
S
g
Schematic dia ram


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