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FIR7N65LG Datasheet(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

No. de Pieza. FIR7N65LG
Descripción  Advanced N-Ch Power MOSFET-I
Descarga  8 Pages
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Fabricante  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Página de inicio  http://www.first-semi.com
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FIR7N65LG Datasheet(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

   
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Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA,VGS=0
650
-
-
V
BVDSS/△TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
-
0.67
-
V/
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
-
-
10
μA
VDS=520V, Tj=125℃
100
IGSSF
Gate-body leakage Current,
Forward
VGS=+30V, VDS=0V
-
-
100
nA
IGSSR
Gate-body leakage Current,
Reverse
VGS=-30V, VDS=0V
-
-
-100
On Characteristics
VGS(TH)
Date Threshold Voltage
ID=250μA,VDS=VGS
2
-
4
V
RDS(ON)
Static Drain-Source
On-Resistance
ID=3.5A,VGS=10V
-
-
1.2
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V,VGS=0,
f=1.0MHz
-
1100
1430
pF
Coss
Output Capacitance
-
135
175
Crss
Reverse Transfer Capacitance
-
16
21
Switching Characteristics
Td(on)
Turn-On Delay Time
VDD=325V,ID=7A
RG=25Ω (Note 3,4)
-
30
70
ns
Tr
Turn-On Rise Time
-
80
170
Td(off)
Turn-Off Delay Time
-
65
140
Tf
Turn-Off Rise Time
-
60
130
Qg
Total Gate Charge
VDS=520V,VGS=10V,
ID=7A (Note 3,4)
-
29
38
nC
Qgs
Gate-Source Charge
-
7
-
Qgd
Gate-Drain Charge
-
14.5
-
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
-
-
-
7
A
ISM
Max. Pulsed Forward Current
-
-
-
28
VSD
Diode Forward Voltage
ID=7A
-
-
1.4
V
Trr
Reverse Recovery Time
IS=7A,VGS =0V
diF/dt=100A/μs
(Note3)
-
320
-
μs
Qrr
Reverse Recovery Charge
-
2.4
-
μC
Notes : 1, L=17.1mH, IAS=7A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
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FIR7N65LG


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