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GD25Q80CEEG Datasheet(PDF) 66 Page - GigaDevice Semiconductor (Beijing) Inc.

No. de pieza GD25Q80CEEG
Descripción Electrónicos  3.3V Uniform Sector Dual and Quad Serial Flash
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Fabricante Electrónico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de inicio  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25Q80CEEG Datasheet(HTML) 66 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q80C
66
2.4
Modify Icc9 from 400-800uA to 0.6-1.2mA
Update the description of all packages
Modify the description of the deep-power-current from 1uA to 5uA in
“Feature” (Chapter 1), which is a typing error.
P44
P50-56
P4
2018-3-5
2.5
Modify tVSL min value from 5ms to 1.8ms
Add tRS to the AC Characteristic, of which the min value is 100us
Modify tBE1 max value from 0.3/0.7s to 0.8/1.2s (<50K/50-100K
cycling)
Modify tBE2 max value from 0.5/0.8s to 1.2/2.0s (<50K/50-100K
cycling)
P42
P46
P46
P46
2018-5-17
2.6
Add 4BH Command
Add DC/AC characteristics @-40℃~105℃
Add DC/AC characteristics @-40℃~125℃
Modify Ordering Information
P4,13,33
P46/P51
P47/P52
P55
2018-8-28


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