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STP8NM60 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP8NM60
Descripción Electrónicos  N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NM60 Datasheet(HTML) 3 Page - STMicroelectronics

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STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On/Off
Table 9: Source Drain Diode
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS = ID(on) x RDS(on)max,
ID =2.5A
2.4
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
440
100
10
pF
pF
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
50
pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 2.5 A
RG =4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
14
10
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 5 A,
VGS = 10V
13
5
6
18
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 2.5 A
RG =4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
23
10
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 5 A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
7
10
17
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current (pulsed)
8
32
A
A
VSD (2)
Forward On Voltage
ISD = 5 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
300
1950
13
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
445
3005
13.5
ns
µC
A


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