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STP8NM60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP8NM60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 16 page 3/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On/Off Table 9: Source Drain Diode (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VDS = ID(on) x RDS(on)max, ID =2.5A 2.4 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 440 100 10 pF pF pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 50 pF td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 2.5 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 14 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 5 A, VGS = 10V 13 5 6 18 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 2.5 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 23 10 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 5 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 7 10 17 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM ( ) Source-drain Current Source-drain Current (pulsed) 8 32 A A VSD (2) Forward On Voltage ISD = 5 A, VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 300 1950 13 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 445 3005 13.5 ns µC A |
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