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BC848CDXV6T5 Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. BC848CDXV6T5
Descripción  Dual General Purpose Transistors
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CEO
45
30
-
-
-
-
V
Collector - Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CES
50
30
-
-
-
-
V
Collector - Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CBO
50
30
-
-
-
-
V
Emitter - Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)EBO
6.0
5.0
-
-
-
-
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
-
-
-
-
15
5.0
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
-
420
270
520
-
800
-
Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
-
-
-
-
0.25
0.6
V
Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
-
-
0.7
0.9
-
-
V
Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
-
660
-
700
770
mV
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
-
-
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
-
-
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz)
NF
-
-
10
dB




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