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BUK7510-55AL Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BUK7510-55AL
Descripción Electrónicos  N-channel TrenchMOS standard level FET
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7510-55AL Datasheet(HTML) 5 Page - NXP Semiconductors

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9397 750 14362
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2005
5 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
6.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown voltage
ID = 250 µA; VGS =0V
Tj =25 °C
55
--V
Tj = −55 °C
50
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9 and 10
Tj =25 °C
234V
Tj = 175 °C
1
--V
Tj = −55 °C
-
-
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
-
0.05
10
µA
Tj = 175 °C
-
-
500
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A; Figure 6 and 8
Tj =25 °C
-
8.5
10
m
Tj = 175 °C
--20
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 25 A; VDD =44V; VGS =10V;
Figure 14
-
124
-
nC
Qgs
gate-source charge
-
22
-
nC
Qgd
gate-drain (Miller) charge
-
50
-
nC
Vplat
plateau voltage
-
5
-
V
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz;
Figure 12
-
4710
6280
pF
Coss
output capacitance
-
980
1180
pF
Crss
reverse transfer capacitance
-
560
770
pF
td(on)
turn-on delay time
VDS =30V; RL = 1.2 Ω;
VGS =10V;RG =10 Ω
-33
-
ns
tr
rise time
-
117
-
ns
td(off)
turn-off delay time
-
132
-
ns
tf
fall time
-95
-
ns
Ld
internal drain inductance
from drain lead 6 mm from package to
center of die
-
4.5
-
nH
from contact screw on mounting base to
center of die
-
3.5
-
nH
from upper edge of drain mounting base
to center of die SOT404
-
2.5
-
nH
Ls
internal source inductance
from source lead to source bond pad
-
7.5
-
nH
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 15
-
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs;
VGS =0V; VR =30V
-73
-
ns
Qr
recovered charge
-
430
-
nC


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