BUK7514-55A datasheet(5/9 Pages) PHILIPS

No. de pieza	BUK7514-55A

Descripción Electrónicos	TrenchMOS standard level FET

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Philips Semiconductors

Product specification

TrenchMOS

 transistor

BUK7514-55A

Standard level FET

BUK7614-55A

Fig.11. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.12. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.13. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

Fig.14. Typical turn-on gate-charge characteristics.

V

GS = f(QG); conditions: ID = 50 A; parameter VDS

[PICTURE]

Fig.15. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.16. Normalised avalanche energy rating.

W

DSS% = f(Tmb); conditions: ID = 75 A

BUK759-60

-100

-50

0

50

100

150

200

0

1

2

3

4

5

Tj / C

VGS(TO) / V

max.

typ.

min.

0

1

2

3

4

5

6

7

8

9

10

0

1020304050

QG / nC

VGS / V

VDS = 14V

VDS = 44V

01

23

45

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

2%

98%

20

40

60

80

100

120

140

160

180

Tmb / C

120

110

100

90

80

70

60

50

40

30

20

10

0

WDSS%

0

1

2

3

4

0.01

0.1

1

10

100

VDS/V

Ciss

Coss

Crss

Capacitance / nF

July 2000

5

Rev 1.000

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